zxtp19020dz da tasheet number: ds33733 rev. 2 - 2 1 of 7 www.diodes.com november 2011 ? diodes incorporated a product line o f diodes incorporated zxtp19020dz 20v pnp high gain transi stor in sot89 features ? bv ceo > -20v ? high current capability max continuous current i c = -6a ? low saturation voltage v ce(sat) < -47mv @ i c = -1a ? r ce(sat) = 28m? ? p d = 2.4w ? complementary part number zxtn19020dz ? lead free, rohs compliant (note 1) ? halogen and antimony free, ?green? device (note 2) ? qualified to aec-q101 standards for high reliability mechanical data ? case: sot89 ? moisture sensitivity: level 1 per j-std-020 ? ul flammability rating 94v-0 ? terminals: matte tin finish ? weight: 0.052 grams (approximate) application ? power disconnect switch ? battery chargers ? high side drivers ? motor drive ordering information (note 3) product marking reel size (inches) tape width (mm) quantity per reel zxtp19020dzta 1m1 7 12 1,000 notes: 1. no purposefully added lead. 2. halogen and antimony free. diodes inc?s ?green? poli cy can be found on our w ebsite at http ://www.diodes.com 3. for packaging details, go to our website at http://www.diodes.com marking information top view sot89 device symbol pin-out top 1m1 = product type marking code c e b c e c b 1m1
zxtp19020dz da tasheet number: ds33733 rev. 2 - 2 2 of 7 www.diodes.com november 2011 ? diodes incorporated a product line o f diodes incorporated zxtp19020dz maximum ratings @t a = 25c unless otherwise specified characteristic symbol value unit collector-base voltage v cbo -25 v collector-emitter voltage v ceo -20 v emitter-base voltage v eco -4 v emitter-base voltage v ebo -7 v continuous collector current (note 6) i c -6 a base current i b -1 a peak pulse current i cm -15 a thermal characteristics @t a = 25c unless otherwise specified characteristic symbol value unit power dissipation (note 4) linear derating factor p d 1.1 8.8 w mw/c power dissipation (note 5) linear derating factor p d 1.8 14.4 w mw/c power dissipation (note 6) linear derating factor p d 2.4 19.2 w mw/c power dissipation (note 7) linear derating factor p d 4.46 35.7 w mw/c power dissipation (note 8) linear derating factor p d 26.7 213 w mw/c thermal resistance, junction to ambient (note 4) r ja 117 c/w thermal resistance, junction to ambient (note 5) r ja 68 c/w thermal resistance, junction to ambient (note 6) r ja 51 c/w thermal resistance, junction to ambient (note 7) r ja 117 c/w thermal resistance, junction to leads (note 8) r jl 4.69 c/w operating and storage temperature range t j, t stg -55 to +150 c notes: 4. for a device surface mounted on 15 mm x 15mm x 0.6mm fr4 pcb with high coverage of single sided 1oz copper, in still air conditions. 5. mounted on 25mm x 25mm x 0.6mm fr4 pcb with high cove rage of single sided 1oz copper, in still air conditions. 6. mounted on 50mm x 50mm x 0.6mm fr4 pcb with high cove rage of single sided 2oz copper, in still air conditions. 7. as note 6 above measured at t<5 seconds. 8. junction to case (collector tab). typical thermal characteristics 100m 1 10 10m 100m 1 10 50mm x 50mm 2oz cu single pulse t amb =25c v ce(sat) limited 100s 1ms 10ms 100ms 1s dc safe operating area -i c collector current (a) -v ce collector-emitter voltage (v) 0 20 40 60 80 100 120 140 160 0.0 0.4 0.8 1.2 1.6 2.0 2.4 50mm x 50mm 2oz cu 25mm x 25mm 1oz cu 15mmx15mm 1oz cu derating curve temperature (c) max power dissipation (w)
zxtp19020dz da tasheet number: ds33733 rev. 2 - 2 3 of 7 www.diodes.com november 2011 ? diodes incorporated a product line o f diodes incorporated zxtp19020dz thermal characteristics (- continued) 100 1m 10m 100m 1 10 100 1k 0 20 40 60 80 100 120 100 1m 10m 100m 1 10 100 1k 1 10 100 100 1m 10m 100m 1 10 100 1k 0 10 20 30 40 50 60 70 100 1m 10m 100m 1 10 100 1k 1 10 100 100 1m 10m 100m 1 10 100 1k 0 10 20 30 40 50 100 1m 10m 100m 1 10 100 1k 1 10 100 t amb =25c 15mm x 15mm 1oz cu d=0.5 d=0.2 d=0.05 d=0.1 single pulse single pulse t amb =25c 15mm x 15mm 1oz cu t amb =25c 25mm x 25mm 1oz cu d=0.5 d=0.2 d=0.05 d=0.1 single pulse single pulse t amb =25c 25mm x 25mm 1oz cu t amb =25c 50mmx 50mm 2oz cu d=0.5 d=0.2 d=0.05 d=0.1 single pulse thermal resistance (c/w) thermal resistance (c/w) thermal resistance (c/w) pulse width (s) pulse width (s) transient thermal impedance single pulse t amb =25c 50mmx 50mm 2oz cu maximum power (w) maximum power (w) maximum power (w) pulse power dissipation pulse width (s) pulse width (s) transient thermal impedance pulse power dissipation pulse width (s) pulse width (s) transient thermal impedance pulse power dissipation
zxtp19020dz da tasheet number: ds33733 rev. 2 - 2 4 of 7 www.diodes.com november 2011 ? diodes incorporated a product line o f diodes incorporated zxtp19020dz electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ. max unit test condition collector-base breakdown voltage bv cbo -25 -55 - v i c = -100a collector-emitter breakdown voltage (notes 9) bv ceo -20 -50 - v i c = -10ma emitter-collector breakdown voltage (reverse blocking) bv ecx -4 -8.6 - v i e = -100a, r bc < 1k ? or 0.25v > v bc > -0.25v emitter-collector breakdown voltage (reverse blocking) bv eco -4 -8.6 - v i e = -100a emitter-base breakdown voltage bv ebo -7 -8.2 - v i e = -100a collector cutoff current i cbo - < -1 -50 na v cb = -25v - - -500 v cb = -25v, t a = 100c emitter cutoff current i ebo - < -1 -50 na v eb = -5.6v dc current transfer static ratio (notes 9) h fe 300 450 900 - i c = -100ma, v ce = -2v 200 290 - i c = -2a, v ce = -2v 65 110 - i c = -6a, v ce = -2v - 25 - i c = -15a, v ce = -2v collector-emitter saturation voltage (notes 9) v ce(sat) - -40 -47 mv i c = -1a, i b = -100ma - -100 -130 i c = -1a, i b = -10ma - -115 -145 i c = -2a, i b = -40ma - -225 -275 i c = -6a, i b = -300ma base-emitter saturation voltage (notes 9) v be ( sat ) - -1000 -1100 mv i c = -6a, i b = -300ma base-emitter turn-on voltage (notes 9) v be ( on ) - -865 -1000 mv i c = -6a, v ce = -2v transitional frequency (notes 9) f t - 176 - mhz i c = -50ma, v ce = -10v, f = 50mhz input capacitance c ibo - - 400 pf v eb = -0.5v, f = 1mhz output capacitance c obo - 36 45 pf v cb = -10v, f = 1mhz delay time t d - 23 - ns v cc = -10v, i c = -1a, i b1 = -i b2 =-50ma rise time t r - 18.4 - ns storage time t s - 266 - ns fall time t f - 49.6 - ns notes: 9. measured under pul sed conditions. pulse width 300 s. duty cycle 2%.
zxtp19020dz da tasheet number: ds33733 rev. 2 - 2 5 of 7 www.diodes.com november 2011 ? diodes incorporated a product line o f diodes incorporated zxtp19020dz typical electrical characteristics 1m 10m 100m 1 10 1m 10m 100m 1 10m 100m 1 10 0.0 0.1 0.2 0.3 0.4 1m 10m 100m 1 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1m 10m 100m 1 10 0.2 0.4 0.6 0.8 1.0 1.2 1m 10m 100m 1 10 0.2 0.4 0.6 0.8 1.0 1.2 2 4 6 8 10 12 14 16 18 20 0 20 40 60 80 100 0 100 200 300 400 500 600 700 800 i c /i b =100 v ce(sat) v i c tamb=25c i c /i b =50 i c /i b =20 i c /i b =10 - v ce(sat) (v) - i c collector current (a) 100c v be(sat) v i c i c /i b =10 150c 25c -55c - v ce(sat) (v) - i c collector current (a) 150c h fe v i c v ce =2v -55c 25c 100c normalised gain - i c collector current (a) 150c 25c v ce(sat) v i c i c /i b =10 100c -55c - v be(sat) (v) - i c collector current (a) 150c v be(on) v i c v ce =2v 100c 25c -55c - v be(on) (v) - i c collector current (a) capacitance v voltage f = 1mhz cobo capacitance (pf) - voltage(v) typical gain (h fe )
zxtp19020dz da tasheet number: ds33733 rev. 2 - 2 6 of 7 www.diodes.com november 2011 ? diodes incorporated a product line o f diodes incorporated zxtp19020dz package outline dimensions suggested pad layout sot89 dim min max a 1.40 1.60 b 0.44 0.62 b1 0.35 0.54 c 0.35 0.43 d 4.40 4.60 d1 1.52 1.83 e 2.29 2.60 e 1.50 typ e1 3.00 typ h 3.94 4.25 l 0.89 1.20 all dimensions in mm dimensions value (in mm) x 0.900 x1 1.733 x2 0.416 y 1.300 y1 4.600 y2 1.475 y3 0.950 y4 1.125 c 1.500 e d h l a c e 8 ( 4 x ) b1 b d1 r 0 . 2 0 0 e1 y1 x1 y2 y c x (3x) y3 y4 x2 (2x)
zxtp19020dz da tasheet number: ds33733 rev. 2 - 2 7 of 7 www.diodes.com november 2011 ? diodes incorporated a product line o f diodes incorporated zxtp19020dz important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhancements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. life support diodes incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2011, diodes incorporated www.diodes.com
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